SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 1 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 e series power mosfet features ? low figure-of-merit (fom) r on x q g ? low input capacitance (c iss ) ? reduced switching and conduction losses ? ultra low gate charge (q g ) ? avalanche energy rated (uis) ? material categorization: for definitions please see www.vishay.com/doc?99912 applications ? server and telecom power supplies ? switch mode power supplies (smps) ? power factor correction power supplies (pfc) ?lighting - high-intensity discharge (hid) - fluorescent ballast lighting ? industrial - welding - induction heating - motor drives - battery chargers - renewable energy - solar (pv inverters) notes a. repetitive rating; puls e width limited by maximum junction temperature. b. v dd = 50 v, starting t j = 25 c, l = 11.6 mh, r g = 25 ? , i as = 4.5 a. c. 1.6 mm from case. d. i sd ? i d , di/dt = 100 a/s, starting t j = 25 c. product summary v ds (v) at t j max. 650 r ds(on) max. at 25 c ( ? )v gs = 10 v 0.38 q g max. (nc) 58 q gs (nc) 6 q gd (nc) 13 configuration single n-channel mosfet g d s d 2 pak (to-263) g d s ordering information package d 2 pak (to-263) lead (pb)-free and ha logen-free SIHB12N60E-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 20 gate-source voltage ac (f > 1 hz) 30 continuous drain current (t j = 150 c) v gs at 10 v t c = 25 c i d 12 a t c = 100 c 7.8 pulsed drain current a i dm 27 linear dera ting factor 1.2 w/c single pulse avalanche energy b e as 117 mj maximum power dissipation p d 147 w operating junction and storage temperature range t j , t stg - 55 to + 150 c drain-source voltage slope t j = 125 c dv/dt 37 v/ns reverse diode dv/dt d 5 soldering recommendations (peak temperature) for 10 s 300 c c
SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 2 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. c oss(er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 % to 80 % v dss . b. c oss(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 % to 80 % v dss . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w maximum junction-to-case (drain) r thjc -0.85 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma -0.71- v/c gate-source threshold voltage (n) v gs(th) v ds = v gs , i d = 250 a 2 - 4 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 10 drain-source on-state resistance r ds(on) v gs = 10 v i d = 6 a - 0.32 0.38 ? forward transconductance g fs v ds = 40 v, i d = 8 a - 3.8 - s dynamic input capacitance c iss v gs = 0 v, v ds = 100 v, f = 1 mhz - 937 - pf output capacitance c oss -53- reverse transfer capacitance c rss -5- effective output capacitance, energy related a c o(er) v ds = 0 v to 480 v, v gs = 0 v -41- effective output capacitance, time related b c o(tr) - 136 - total gate charge q g v gs = 10 v i d = 6 a, v ds = 480 v -2958 nc gate-source charge q gs -6- gate-drain charge q gd -13- turn-on delay time t d(on) v dd = 480 v, i d = 6 a, v gs = 10 v, r g = 9.1 ? -1428 ns rise time t r -1938 turn-off delay time t d(off) -3570 fall time t f -1938 gate input resistance r g f = 1 mhz, open drain - 1.1 - ? drain-source body diode characteristics continuous source-dra in diode current i s mosfet symbol showing the integral reverse p - n junction diode --12 a pulsed diode forward current i sm --48 diode forward voltage v sd t j = 25 c, i s = 6 a, v gs = 0 v - - 1.2 v reverse recovery time t rr t j = 25 c, i f = i s = 6 a, di/dt = 100 a/s, v r = 25 v - 350 - ns reverse recovery charge q rr -4-c reverse recovery current i rrm -19-a s d g
SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 3 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 top 15 v 14 v 13 v 12 v 11 v 10 v 9 v t j = 25 c 6 v 8 v 5 v 7 v v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 01020 5152530 5 v 6 v 7 v top 15 v 14 v 13 v 12 v 11 v 10 v 9 v 8 v t j = 150 c 0 4 8 12 16 20 v gs , gate-to-source voltage (v) i d , drain-to-source current (a) 010 25 51520 5 10 15 20 25 30 0 t j = 25 c t j = 150 c t j , junction temperature (c) r d s (on) , drain-to- s ource 2.5 0.5 - 60 3 2 1.5 1 0 - 40 - 20 0 20 40 60 80 100 120 140 160 on re s i s tance (normalized) v gs = 10 v i d = 6 a v d s , drain-to- s ource voltage (v) capacitance (pf) 100 10 0 200 400 10 000 1 1000 100 300 500 600 c i ss c o ss c r ss v gs = 0 v, f = 1 mhz c i ss = c g s + c gd , c d s s horted c r ss = c gd c o ss = c d s + c gd q g , total g ate charge (nc) v gs , g ate-to- s ource voltage (v) 16 4 0 24 20 12 8 0 10 20 30 40 50 60 v d s = 480 v v d s = 300 v v d s = 120 v
SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 4 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical source-dra in diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain curre nt vs. case temperature fig. 10 - temperature vs. drain-to-source voltage fig. 11 - normalized thermal transient impedance, junction-to-case v s d , s ource-drain voltage (v) i s d , rever s e drain current (a) 1 10 100 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j = 150 c t j = 25 c v gs = 0 v v d s , drain-to- s ource voltage (v) i d , drain current (a) 1101001000 * v gs > minimum v gs at which r d s (on) i s s pecified 0.01 0.1 1 10 100 1000 1 m s 10 m s 100 s limited by r d s (on) * i dm = limited operation in thi s area limited by r d s (on) bvd ss limited t c = 25 c t j = 150 c s ingle pul s e t j , case temperature (c) i d , drain current (a) 25 50 75 100 125 150 3 6 9 12 15 0 t j , junction temperature (c) v ds , drain-to-source - 60 0 160 brakdown voltage (v) - 40 - 20 20 40 60 80 100 120 140 525 550 575 600 625 650 675 700 725 750 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective tran s ient thermal impedance pul s e time ( s ) duty cycle = 0.5 0.2 0.1 s ingle pul s e 0.02 0.05
SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 5 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - switching time test circuit fig. 13 - switching time waveforms fig. 14 - unclamped inductive test circuit fig. 15 - unclamped inductive waveforms fig. 16 - basic gate charge waveform fig. 17 - gate charge test circuit pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
SIHB12N60E www.vishay.com vishay siliconix s12-0646-rev. b, 26-mar-12 6 document number: 91486 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18 - for n-channel vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91486 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
document number: 91364 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix to-263ab (high voltage) notes 1. dimensioning and toler ancing per asme y14.5m-1994. 2. dimensions are shown in millimeters (inches). 3. dimension d and e do not include mold flash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimensions are me asured at the outmost extremes of the plastic body at datum a. 4. thermal pad contour optional within dimension e, l1, d1 and e1. 5. dimension b1 and c1 apply to base metal only. 6. datum a and b to be determined at datum plane h. 7. outline conforms to jedec outline to to-263ab. 5 4 1 3 l1 l2 d b b e h b a detail a a a c c2 a 2 x e 2 x b 2 2 x b 0.010 a b mm 0.004 b m base metal plating b 1, b 3 ( b , b 2) c1 (c) section b - b and c - c scale: none lead tip 4 34 (dat u m a) 2 c c b b 5 5 v ie w a - a e1 d1 e 4 4 b h seating plane ga u ge plane 0 to 8 detail ?a? rotated 90 cw scale 8 :1 l3 a1 l4 l millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 - 0.270 - a1 0.00 0.25 0.000 0.010 e 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 e1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 l2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.38 9.65 0.330 0.380 l4 4.78 5.28 0.188 0.208 ecn: s-82110-rev. a, 15-sep-08 d w g: 5970
an826 vishay siliconix document number: 73397 11-apr-05 www.vishay.com 1 recommended minimum pads for d 2 pak: 3-lead 0.635 (16.129) recommended minimum pads dimensions in inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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